Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-29
2008-12-09
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S324000, C257S350000, C257SE21170, C257SE21304, C257SE21278, C257SE21293, C257SE21324, C257SE21435
Reexamination Certificate
active
07462896
ABSTRACT:
The object is simplification of a manufacturing process for nonvolatile memory by reducing additional processes for forming a charge storage structure, and downsizing of nonvolatile memory. The solution is a manufacturing method for semiconductor memory device including a process for forming sequentially a first oxide film102, a first nitride film103on a semiconductor substrate101, a process for removing the first oxide film102and the first nitride film103in an element isolating region1010B, a process for overhanging the first nitride film103over the first oxide film102by removing the edge of the first oxide film102by cleaning or wet etching, a process for forming a first insulating film105(element isolating insulating film) so that a lower density part105chaving a lower film density than other parts thereof can be formed in the side part of the fist oxide film102, a process for exposing the lower density part105c, a process for forming a hole in the first insulating film105by eroding the lower concentration part105cusing cleaning or wet etching, and a process for forming charge storage film in the hole.
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Kurachi Ikuo
Maruyama Tetsuhiro
Nakamura Takaharu
Tsujimoto Masao
Nhu David
Oki Electric Industry Co. Ltd.
Rabin & Berdo PC
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