Semiconductor memory device and its production process

Details Semiconductor memory device and its production process Semiconductor memory device and its production process

2006-06-13

2006-06-13

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C438S257000

Reexamination Certificate

active

07061038

ABSTRACT:
The present invention provides a semiconductor memory device comprising: a first conductivity type semiconductor substrate; and a plurality of memory cells constituted of an island-like semiconductor layer which is formed on the semiconductor substrate, and a charge storage layer and a control gate which are formed entirely or partially around a sidewall of the island-like semiconductor layer, wherein the plurality of memory cells are disposed in series, the island-like semiconductor layer which constitutes the memory cells has cross-sectional areas varying in stages in a horizontal direction of the semiconductor substrate, and an insulating film capable of passing charges is provided at least in a part of a plane of the island-like semiconductor layer horizontal to the semiconductor substrate.

REFERENCES:
patent: 6512695 (2003-01-01), Forbes et al.
patent: 6778441 (2004-08-01), Forbes et al.
patent: 2877462 (1999-01-01), None
Endoh et al., “Semiconductor Memory and Its Production Process”, U.S. Appl. No. 10/17,259, filed Jun. 20, 2002.

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