Semiconductor memory device and fabrication process thereof

Details Semiconductor memory device and fabrication process thereof Semiconductor memory device and fabrication process thereof

1995-11-21

1997-03-11

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Capacitors

257500, 257499, 257638, G11C 1124

Patent

active

056108540

ABSTRACT:
A method for fabricating a semiconductor memory device includes the steps of forming, in a semiconductor substrate of a first conductivity type, a well of a second opposite conductivity type by protecting the substrate surface except for a part where the well of the second conductivity type is to be formed, oxidizing the exposed surface of the semiconductor substrate while using the same mask pattern to form a thick oxide film on the surface of the well, and removing the thick oxide film by an etching process to form a recessed surface on the well.

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Yoshikawa et al., "Process Technologies for a High Speed 16 MDRAM with Trench Type Cell"; Dig. Tech. Papers, Symp. VLSI Technology, 1989, pp. 67-68.
Sagara et al., "A 0.72 um.sup.2 Recessed STC (RSTC) Technology for 256 MBit DRAMs Using Quarter-Micron Phase Shift Lithography"; Dig., Tech. Papers, Symp. VLSI Technology, 1992, pp. 10-11.

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