Semiconductor memory device and fabrication method thereof

Details Semiconductor memory device and fabrication method thereof Semiconductor memory device and fabrication method thereof

2005-04-26

2005-04-26

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S066000, C257S067000, C257S069000, C257S379000, C257S380000, C257S903000, C438S257000

Reexamination Certificate

active

06885070

ABSTRACT:
In a semiconductor memory device including memory cells and a peripheral circuit unit, a memory cell has a first gate structure formed on a semiconductor substrate; a first impurity region of a first conductive type formed in the substrate on a first side of the gate structure; and a second impurity region formed in the substrate on a second side of the gate structure, the second impurity region including: a third impurity region of the first conductive type, a fourth impurity region of the first conductive type between the third impurity region and the second side of the gate structure, and a halo ion region of a second conductive type formed adjacent to the fourth impurity region.

REFERENCES:
patent: 5534455 (1996-07-01), Liu
patent: 6025224 (2000-02-01), Gall et al.
patent: 6069384 (2000-05-01), Hause et al.
patent: 6169313 (2001-01-01), Tsutsumi et al.

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