Semiconductor memory device and fabrication method thereof

Details Semiconductor memory device and fabrication method thereof Semiconductor memory device and fabrication method thereof

2011-04-05

2011-04-05

Arora, Ajay K (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C438S054000, C257SE21649

Reexamination Certificate

active

07919767

ABSTRACT:
A semiconductor memory device comprises a heater electrode, a phase change portion, a heat insulation portion and an upper electrode. The phase change portion comprises a concave portion and a contact portion. The concave portion is in contact with the heater electrode. The contact portion is formed integrally with the concave portion. The heat insulation portion is formed in the concave portion. The upper electrode is formed on the contact portion and the heat insulation portion so that the heat insulation portion is positioned between the concave portion and the upper electrode.

REFERENCES:
patent: 6740921 (2004-05-01), Matsuoka et al.
patent: 6815705 (2004-11-01), Klersy et al.
patent: 7173271 (2007-02-01), Chang
patent: 2003/0047762 (2003-03-01), Lowrey
patent: 2003/0071289 (2003-04-01), Hudgens et al.
patent: 2004/0188735 (2004-09-01), Hideki
patent: 2004/0195604 (2004-10-01), Hwang et al.
patent: 2005/0111247 (2005-05-01), Takaura et al.
patent: 2005/0185444 (2005-08-01), Yang et al.
patent: 2006/0006374 (2006-01-01), Chang
patent: 2006/0113520 (2006-06-01), Yamamoto et al.
patent: 2003-249626 (2003-09-01), None
patent: 2004-274055 (2004-09-01), None
patent: 2006-19688 (2006-01-01), None
patent: 2006-120751 (2006-05-01), None
patent: 2006-156886 (2006-06-01), None
patent: WO 03/023875 (2003-03-01), None
Japanese Office Action dated Apr. 16, 2008 with partial English translation.
Japanese Office Action dated Aug. 11, 2009 with a partial English Translation.

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