Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2005-09-13
2005-09-13
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S233100
Reexamination Certificate
active
06944082
ABSTRACT:
In the semiconductor memory device of the invention, even in the case of generation of a write access request or a refresh request in advance, an access control module preferentially executes a read access operation in response to a read access request generated by a change of an external access timing signal to an inactive level while a write enable signal supplied from an external device is at an inactive level. This arrangement desirably eliminates the long rate restriction of the semiconductor memory device.
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Mizugaki Koichi
Otsuka Eitaro
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