Semiconductor memory device and electronic apparatus...

Details Semiconductor memory device and electronic apparatus... Semiconductor memory device and electronic apparatus...

2005-09-27

2005-09-27

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000

Reexamination Certificate

active

06950327

ABSTRACT:
In a ferroelectric capacitor, two displacements (points b and c) of a remanent polarization correspond to data “1” and one displacement (point a) of the remanent polarization corresponds to data “0”. When the data “1” is written, either of two electric voltage pulses different in potential or in pulse width is applied to the ferroelectric capacitor to position the displacement of the remanent polarization in the ferroelectric capacitor at the point b or at the point c. When the data “0” is written, on the other hand, the displacement of the remanent polarization in the ferroelectric capacitor is positioned at the point a.

REFERENCES:
patent: 5835400 (1998-11-01), Jeon et al.
patent: 6370056 (2002-04-01), Chen et al.
patent: 6438021 (2002-08-01), Kato
patent: 6639823 (2003-10-01), Hasegawa
patent: 2930168 (1999-05-01), None
patent: 2000-293988 (2000-10-01), None

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