Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2011-08-09
2011-08-09
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S210130, C365S230030
Reexamination Certificate
active
07995370
ABSTRACT:
A ferroelectric memory includes a memory cell array including a first unit block, a second unit block, and a plurality of dummy cells. The plurality of dummy cells being arranged toward a column direction and being disposed between the first unit block and the second unit block. The first unit block including a plurality of first memory cells arranging in t rows, and including a plurality of first plate lines arranging toward a row direction. The second unit block including a plurality of second memory cells arranged in t rows, and including a plurality of second plate lines arranging toward a row direction. Each of the plurality of dummy cells including a ferroelectric capacitor. Either of the first second plate line or the second plate line of the second unit block extending above the plurality of dummy cells.
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Communication from European Patent Office regarding counterpart application.
Shoichiro Kawashima, Bitline GND Sensing Technique for Low-Voltage Operation FeRAM, IEEE Journal of Solid-State Circuits, IEEE Service Center, Piscataway, NJ, US vol. 37, No. 5, May 2002, pp. 592-598.
Harness & Dickey & Pierce P.L.C.
Nguyen Dang T
Seiko Epson Corporation
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