Semiconductor memory device and driving method thereof

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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C365S205000

Reexamination Certificate

active

07450455

ABSTRACT:
A semiconductor memory device prevents deterioration of refresh operation caused by sensing noise and a driving method thereof. First pull-down and second pull-down voltages which are different from each other are as a pull-down voltage of a bit line sense amplifier. The first and the second pull-down voltages are used in different driving periods to protect data from noises caused by another memory bank. A driving period can be separated into an initial sensing period, wherein large currents are consumed and significant noise is generated, and a subsequent stable period. The driving period can be separated into a pre-precharge period and a post-precharge period.

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