Semiconductor memory device and driving method thereof

Details Semiconductor memory device and driving method thereof Semiconductor memory device and driving method thereof

2006-11-14

2006-11-14

Pert, Evan (Department: 2826)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S051000, C365S072000, C257S314000, C257S324000

Reexamination Certificate

active

07136301

ABSTRACT:
First active regions and second active regions intersecting the first active regions at a right angle are defined on the surface of a semiconductor substrate, and diffusion regions are formed in the first and second active regions to interpose an intersecting region therebetween. Then, a gate structure is formed linearly to extend over the intersecting region at a non-zero angle with respect to the first and second active regions. Further, terminals to be connected to metal interconnects are provided on the diffusion regions at a non-zero angle with respect to the first and second active regions, respectively. Consequently provided is a nonvolatile semiconductor memory having a simple gate structure capable of storing 4-bits of information in one memory cell.

REFERENCES:
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patent: 2001-110918 (2001-04-01), None
B. Eitan, et al., “Can NROM, a 2-bit, Trapping Storage NVM Cell, Give a Real Challenge to Floating Gate Cells?” SSDM (1999).

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