Semiconductor memory device and data processing system...

Static information storage and retrieval – Read/write circuit – Serial read/write

Reexamination Certificate

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C365S230050, C365S233100

Reexamination Certificate

active

07978557

ABSTRACT:
A semiconductor device that includes a plurality of memory cell arrays, a plurality of ports, a plurality of internal address generating circuits, and a controller. The plurality of internal address generating circuits may generate first and second internal addresses of first and second memory cell arrays of the plurality of memory cell arrays. The first internal address may designate a first area of the first memory cell array. The second internal address may designate a second area of the second memory cell array. The controller reads a series of data from the first area sequentially and writes the series of read data into the second area sequentially without transferring the series of read data to the plurality of ports.

REFERENCES:
patent: 5566124 (1996-10-01), Fudeyasu et al.
patent: 5566371 (1996-10-01), Ogawa
patent: 2006/0161338 (2006-07-01), Sohn et al.
patent: 2006/0236041 (2006-10-01), Sohn et al.
patent: 2007/0022245 (2007-01-01), Sohn et al.
patent: 2007-35039 (2007-02-01), None
“A 512Mb 2-Channel Mobile DRAM (OneDRAM) with Shared Memory Arrary” Kyung woo Nam, IEEE Asisan Solid-State Circuits Conference, Korea, Nov. 12-14, 2007, pp. 204-207.

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