Semiconductor memory device and corresponding programming...

Details Semiconductor memory device and corresponding programming... Semiconductor memory device and corresponding programming...

2008-01-22

2008-01-22

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S910000, C257SE27102

Reexamination Certificate

active

07321153

ABSTRACT:
A semiconductor cell includes, within a substrate region, four active zones that are mutually laterally isolated, the first active zone to be connected to a first voltage, the second active zone, of an opposite type of conductivity to that of the first active zone, to be connected to a second voltage, the third and fourth active zones being mutually connected via an electrically conducting connection external to the substrate. The value of the binary data item is defined by an implantation of a chosen type in a predetermined part of the substrate region or in the third and fourth active zones.

REFERENCES:
patent: 5960287 (1999-09-01), Kunitou
patent: 6028342 (2000-02-01), Chang
patent: 6344679 (2002-02-01), Klaasen et al.
patent: 6674661 (2004-01-01), Becker
patent: 6821841 (2004-11-01), Wu et al.

Affiliated with

Also associated with

Rating

Semiconductor memory device and corresponding programming... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device and corresponding programming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and corresponding programming... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2808413