Semiconductor memory device and control method thereof

Details Semiconductor memory device and control method thereof Semiconductor memory device and control method thereof

2005-03-01

2005-03-01

Tran, M. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S148000

Reexamination Certificate

active

06862213

ABSTRACT:
A semiconductor memory device comprises a memory cell formed of a nonvolatile resistance variable memory device in which a resistance value is variable according to the application of electrical stress, and a selection transistor; and word-line-voltage feeding means that feeds a word line voltage to a word line to be coupled to the memory cell. When executing a program operation for the memory cell and a verify operation for verifying a program state of the memory cell, the word-line-voltage feeding means feeds the word line voltage of the same voltage level to the word line to be coupled to the memory cell selected as a program target for two operations set as mutually related front and rear steps, namely, a program operation to be executed for the memory cell and a verify operation to be executed to verify a program state of the memory cell.

REFERENCES:
patent: 5694366 (1997-12-01), Chevallier et al.
patent: 5883827 (1999-03-01), Morgan
patent: 6134141 (2000-10-01), Wong
patent: 6259627 (2001-07-01), Wong
patent: 20020015323 (2002-02-01), Maruyama
European Search Report mailed on Feb. 3, 2004, for EP patent application No. EP 03 256 662, two pages.

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