Semiconductor memory device allowing reduction of power consumed

Details Semiconductor memory device allowing reduction of power consumed Semiconductor memory device allowing reduction of power consumed

1995-08-03

1997-09-16

Nguyen, Viet Q.

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

365205, 365194, 365202, G11C 1134

Patent

active

056687621

ABSTRACT:
A semiconductor memory device 251 has a sense amplifier 7 of shared sense amplifier type. A switching signal generating circuit 253 is provided for application of control signals .phi..sub.1 and .phi..sub.2 to a control electrode of a connection transistor of sense amplifier 7. Switching signal generating circuit 253 applies control signals .phi..sub.1 and .phi..sub.2 which is boosted only for a prescribed time period after the rise of external /RAS signal to the control electrode of the connection transistor of sense amplifier 7. Therefore, as compared with the operation in which control signals .phi..sub.1 and .phi..sub.2 which are constantly boosted are applied, power consumption can be reduced.

REFERENCES:
patent: 4649523 (1987-03-01), Holder, Jr. et al.
patent: 4825418 (1989-04-01), Itoh et al.
patent: 5267214 (1993-11-01), Fujishima et al.
patent: 5412604 (1995-05-01), Fukuda et al.
German Patent Office Search Report, Jan. 27, 1997 and translation thereof.

Affiliated with

Also associated with

Rating

Semiconductor memory device allowing reduction of power consumed does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device allowing reduction of power consumed, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device allowing reduction of power consumed will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-223168