Semiconductor memory device allowing accurate burn-in test

Details Semiconductor memory device allowing accurate burn-in test Semiconductor memory device allowing accurate burn-in test

2006-09-19

2006-09-19

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S230030, C365S196000, C365S189110, C365S230060, C257S391000, C257S392000

Reexamination Certificate

active

07110282

ABSTRACT:
An insulated gate type field effect transistor in a memory cell array is a transistor having a gate insulating film which is thicker than a gate insulating film of an insulated gate type field effect transistor in an array peripheral circuit. DRAM (Dynamic Random Access Memory) cell-based semiconductor memory device can be implemented which allows a burn-in test to be accurately performed without degrading sensing operation characteristics even under a low power supply voltage.

REFERENCES:
patent: 5751651 (1998-05-01), Ooishi
patent: 5998828 (1999-12-01), Ueno et al.
patent: 6649984 (2003-11-01), Noda et al.
patent: 2002/0001246 (2002-01-01), Hidaka
patent: 2002/0027256 (2002-03-01), Ishibashi et al.
patent: 7-057465 (1995-03-01), None
patent: 2000-293986 (2000-10-01), None
patent: 2001-068634 (2001-03-01), None
patent: 2002-8370 (2002-01-01), None
patent: 1998-086383 (1998-05-01), None

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