Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Bad bit

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Details

36523003, G11C 700

Patent

active

057086125

ABSTRACT:
When a test mode signal is at an inactive level, a redundant cell column control circuit selects redundant cell column select signals. When the test mode signal is at an active level, the circuit selects a predetermined bit from the column select signal to output redundant cell column selection control signals, which are supplied to redundant cell column switch circuits. In a test mode, all blocks are set to an active state to select a predetermined memory cell column, and the redundant cell columns are concurrently selected. An accelerated biassing test can be conducted for all redundant cell columns within a competent test time.

REFERENCES:
patent: 5459690 (1995-10-01), Rieger

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