Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2008-06-17

2008-06-17

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Data refresh

C365S228000, C365S185090, C365S185250, C365S239000

Reexamination Certificate

active

07388799

ABSTRACT:
A semiconductor memory device for consuming a uniform amount of current includes a memory cell block including a N normal wordline and a M preliminary wordline; a refresh address counting block for outputting a refresh address, having a plurality of bits, corresponding to the N normal wordline and the M preliminary wordline; a refresh counting control block for resetting the refresh address counting block when the refresh address counts a predetermined count during a test mode; and a row decoding block for refreshing unit cells coupled to the N normal wordline and unit cells coupled to the M preliminary wordline of the memory cell block according to the refresh address and a redundancy control signal outputted from the refresh counting control block, wherein M, N are positive integers.

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Taiwanese Office Action (with English Translation) issued in Taiwanese Patent Application No. TW 094147412, dated Jan. 8, 2008.

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