Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-06-21
1998-05-05
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
365 51, 365210, H01L 27108, G11C 502, G11C 1300
Patent
active
057478430
ABSTRACT:
An improved semiconductor memory device in which an electric circuit operates normally is provided. A block of memory cells of a dynamic random access memory is provided on a semiconductor substrate. A dummy storage node is provided near a corner portion of the memory cell block. A dummy cell plate is provided such that it covers the dummy storage node and is electrically insulated from a main cell plate of the DRAM.
REFERENCES:
patent: 5361234 (1994-11-01), Iwasa
Inoue Shinya
Matsuo Hiroshi
Watanabe Shinya
Yokoyama Yuichi
Crane Sara W.
Mitsubishi Denki & Kabushiki Kaisha
Ryoden Semiconductor System Engineering Corporation
Seacord, II Andrew W.
LandOfFree
Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-57166