Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2008-04-22
2008-04-22
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S185210, C365S205000, C365S207000
Reexamination Certificate
active
07362623
ABSTRACT:
A semiconductor memory device includes: a memory cell array having a plurality of memory cells arranged therein; and a sense amplifier circuit configured to read data of the memory cell array, wherein a comparison operation is performed between read out data from the memory cell array and externally supplied expectance data in the sense amplifier circuit.
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Honma Mitsuaki
Shibata Noboru
Kabushiki Kaisha Toshiba
Lam David
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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