Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2011-01-04
2011-01-04
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S185200
Reexamination Certificate
active
07864614
ABSTRACT:
A semiconductor memory device includes a memory cell array which includes a plurality of memory cells which are arrayed in a matrix at intersections between a plurality of word lines and a plurality of bit lines and a power supply circuit which includes a first band gap reference circuit which outputs a first output voltage, and a second band gap reference circuit which outputs a second output voltage having lower temperature characteristics than the first output voltage on a low temperature side, and generates a power supply voltage on the basis of the second output voltage at a time of a data write operation of the memory cells.
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Chin Gyosho
Honda Yasuhiko
Midorikawa Tatsuro
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Phung Anh
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