Static information storage and retrieval – Read/write circuit – Including signal comparison
Reexamination Certificate
2011-05-03
2011-05-03
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including signal comparison
C365S189080, C365S230030
Reexamination Certificate
active
07936613
ABSTRACT:
A charge driving circuit and a discharge driving circuit occupy a relatively small area and maintain driving force in a semiconductor memory device having a plurality of banks. The semiconductor memory device includes multiple banks, a common discharge level detector configured to detect a voltage level of internal voltage terminals on the basis of a first target level in response to active signals corresponding to the respective banks, and a discharge drivers assigned to the respective banks. The discharge drivers are configured to drive the internal voltage terminals to be discharged in response to the respective active signals and respective discharge control signals outputted from the common discharge level detector.
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Hynix / Semiconductor Inc.
IP & T Group LLP
Luu Pho M
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