Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2011-04-05

2011-04-05

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S189090, C365S210100, C365S211000

Reexamination Certificate

active

07920417

ABSTRACT:
A semiconductor memory cell includes a plurality of memory cells configured to store data having polarity corresponding to a direction of current flowing in first and second driving lines, a current generator configured to generate a predetermined read current, apply the predetermined read current to the plurality of memory cells, and generate a data current corresponding variation of the read current according to the data and a current controller connected to a current path of the read current and configured to control a current amount of the read current.

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Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Nov. 29, 2011.

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