Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-08-09
2011-08-09
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S201000, C365S208000, C365S210100
Reexamination Certificate
active
07995379
ABSTRACT:
A semiconductor memory device includes a sense amplifier that compares intensities of currents flowing through a first node and a second node with each other, a first MOSFET having a drain terminal connected with the first node, a second MOSFET having a drain terminal connected with the second node, a memory cell connected with a source terminal of the first MOSFET, and a reference cell. The semiconductor memory device further includes a connection control circuit that connects a source terminal of the second MOSFET with the reference cell at the time of a regular operation and connects the source terminal of the second MOSFET with a reference voltage terminal at the time of a test operation.
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Kabushiki Kaisha Toshiba
Luu Pho M
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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