Semiconductor memory device

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S201000, C365S208000, C365S210100

Reexamination Certificate

active

07995379

ABSTRACT:
A semiconductor memory device includes a sense amplifier that compares intensities of currents flowing through a first node and a second node with each other, a first MOSFET having a drain terminal connected with the first node, a second MOSFET having a drain terminal connected with the second node, a memory cell connected with a source terminal of the first MOSFET, and a reference cell. The semiconductor memory device further includes a connection control circuit that connects a source terminal of the second MOSFET with the reference cell at the time of a regular operation and connects the source terminal of the second MOSFET with a reference voltage terminal at the time of a test operation.

REFERENCES:
patent: 7161861 (2007-01-01), Gogl et al.
patent: 7596032 (2009-09-01), Ogawa et al.
patent: 7706176 (2010-04-01), Dittrich
patent: 2006/0044886 (2006-03-01), Iwata et al.
patent: 5-136361 (1993-06-01), None
patent: 7-153287 (1995-06-01), None
patent: 2003-297072 (2003-10-01), None
patent: 2004-62922 (2004-02-01), None
patent: 2005-353145 (2005-12-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2697943

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.