Semiconductor memory device

Error detection/correction and fault detection/recovery – Pulse or data error handling – Memory testing

Reexamination Certificate

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C714S733000, C714S738000

Reexamination Certificate

active

07979758

ABSTRACT:
Semiconductor memory device includes a cell array including a plurality of unit cells; and a test circuit configured to perform a built-in self-stress (BISS) test for detecting a defect by performing a plurality of internal operations including a write operation through an access to the unit cells using a plurality of patterns during a test procedure carried out at a wafer-level.

REFERENCES:
patent: 6190972 (2001-02-01), Zheng et al.
patent: 6823485 (2004-11-01), Muranaka
patent: 6829737 (2004-12-01), McBride
patent: 6943575 (2005-09-01), Marr
patent: 7119568 (2006-10-01), Marr
patent: 7392443 (2008-06-01), Braun
patent: 2007/0018677 (2007-01-01), Marr
patent: 1995-0014097 (1995-11-01), None
patent: 2001-0067326 (2001-07-01), None
patent: 10-2005-0021932 (2005-03-01), None

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