Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2011-07-12

2011-07-12

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S189040, C365S185210, C365S230060, C365S196000, C365S189150

Reexamination Certificate

active

07978552

ABSTRACT:
A memory includes memory cells, wherein during a first write operation in which first logical data is written in all memory cells connected to a first word line, a source line driver and a word line driver, the source line driver shifts a voltage of a selected source line corresponding to the first word line in a direction away from the voltage of the first word line and the word line driver shifts a voltage of a second word line in a same direction as a transition direction of voltage of a selected source line, and during a second write operation in which second logical data is written in a selected cell connected to the first word line, the source line driver and the word line driver shift voltages of the selected source line and the second word line in a direction approaching the voltage of the first word line.

REFERENCES:
patent: 6621725 (2003-09-01), Ohsawa
patent: 7539043 (2009-05-01), Ohsawa
patent: 2009/0273976 (2009-11-01), Maejima et al.
patent: 2006-301377 (2006-11-01), None

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2673336