Semiconductor memory device

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S230050

Reexamination Certificate

active

08004879

ABSTRACT:
A semiconductor memory device includes a plurality of memory cells205provided corresponding to nodes of a plurality of word lines (WLBk, WLBk+1) and a plurality of bit line pairs (D1, DB1, D1+1, DB1+1). And column selection lines (S1, S1+1) are provided corresponding to each of the bit line pairs. Each of the memory cell includes an inverter (INV3) receiving power from the column selection line, and having its input connected to the word line and its output connected to gates of access transistors. Only the access transistors of a memory cell whose word line and column selection line are simultaneously selected are turned on.

REFERENCES:
patent: 6985379 (2006-01-01), Nii
patent: 7440313 (2008-10-01), Abeln et al.
patent: 7808812 (2010-10-01), Liu et al.
patent: 2010/0097844 (2010-04-01), Liu
patent: 60-247892 (1985-12-01), None
patent: 2000-339971 (2000-12-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2673137

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.