Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2011-08-23
2011-08-23
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S230050
Reexamination Certificate
active
08004879
ABSTRACT:
A semiconductor memory device includes a plurality of memory cells205provided corresponding to nodes of a plurality of word lines (WLBk, WLBk+1) and a plurality of bit line pairs (D1, DB1, D1+1, DB1+1). And column selection lines (S1, S1+1) are provided corresponding to each of the bit line pairs. Each of the memory cell includes an inverter (INV3) receiving power from the column selection line, and having its input connected to the word line and its output connected to gates of access transistors. Only the access transistors of a memory cell whose word line and column selection line are simultaneously selected are turned on.
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Phung Anh
Renesas Electronics Corporation
Sughrue & Mion, PLLC
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