Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2011-08-02

2011-08-02

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S189110, C365S203000

Reexamination Certificate

active

07990753

ABSTRACT:
A nonvolatile semiconductor memory device having a plurality of unit cell arrays having memory cells each containing a first wiring and a second wiring intersecting each other, and a variable resistive element arranged at each intersection of said first wiring and said second wiring and electrically rewritable to nonvolatilely store a resistance value as data, characterized by comprising: a control circuit for applying a predetermined voltage to said memory cell in selectively accessing said memory cell; wherein said control circuit accumulates a predetermined electric charge in a parasitic capacitance of said memory cell included in a first unit cell array that is said specific unit cell array and not accessed at the first time, while on the other hand, accumulates a predetermined electric charge in a parasitic capacitance of said memory cell included in a second unit cell array that is said specific unit cell array other than said first unit cell array and not accessed at the second time after the passage of a predetermined time from said first time.

REFERENCES:
patent: 4800530 (1989-01-01), Itoh et al.
patent: 2007/0195582 (2007-08-01), Sakata et al.
patent: 2009/0262568 (2009-10-01), Ono et al.

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2666984