Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2011-04-26

2011-04-26

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S207000, C365S189140, C365S189150, C365S189160

Reexamination Certificate

active

07933141

ABSTRACT:
In a semiconductor memory device, a memory cell is connected with a local sense amplifier and a global sense amplifier via a local bit line and a global bit line. The local sense amplifier is a single-ended sense amplifier including a single MOS transistor, which detects a potential of the local bit line which varies when reading and writing data with the memory cell. The threshold voltage of the MOS transistor is monitored so as to produce a high-level write voltage and a low-level write voltage, which are corrected and shifted based on the monitoring result so as to properly perform a reload operation on the memory cell by the global local sense amplifier. Thus, it is possible to cancel out temperature-dependent variations of the threshold voltage and shifting of the threshold voltage due to dispersions of manufacturing processes.

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