Static information storage and retrieval – Read/write circuit – Including specified plural element logic arrangement
Reexamination Certificate
2011-07-05
2011-07-05
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including specified plural element logic arrangement
C365S063000, C365S210100, C365S214000, C365S230030, C365S230060, C365S189070, C365S231000
Reexamination Certificate
active
07974138
ABSTRACT:
A semiconductor memory device includes a selector line selection circuit for selecting, in a read operation, a selector line for connecting a first main bit line connected to the sense amplifier with a sub-bit line to which the memory cell being read is connected, a selector line for connecting the first main bit line with a sub-bit line of at least one sector different from the sector to which the memory cell being read belongs, a selector line for connecting a second main bit line connected to the sense amplifier with a sub-bit line to which the reference cell is connected, and a selector line for connecting the second main bit line with a sub-bit line of at least one sector different from the sector to which the memory cell being read belongs.
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McDermott Will & Emery LLP
Nguyen Viet Q
Panasonic Corporation
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