Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Including specified plural element logic arrangement

Reexamination Certificate

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Details

C365S063000, C365S210100, C365S214000, C365S230030, C365S230060, C365S189070, C365S231000

Reexamination Certificate

active

07974138

ABSTRACT:
A semiconductor memory device includes a selector line selection circuit for selecting, in a read operation, a selector line for connecting a first main bit line connected to the sense amplifier with a sub-bit line to which the memory cell being read is connected, a selector line for connecting the first main bit line with a sub-bit line of at least one sector different from the sector to which the memory cell being read belongs, a selector line for connecting a second main bit line connected to the sense amplifier with a sub-bit line to which the reference cell is connected, and a selector line for connecting the second main bit line with a sub-bit line of at least one sector different from the sector to which the memory cell being read belongs.

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