Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2011-03-22

2011-03-22

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189070, C365S189090, C365S222000

Reexamination Certificate

active

07911821

ABSTRACT:
A ferroelectric memory is provided with a voltage generating circuit configured to generate prescribed driving potential, a driving interconnection to which the driving potential is applied, a plurality of memory cells connected to the driving interconnections and an internal voltage comparison circuit configured to compare inputted potential and to output results thereof. A plurality of voltage monitoring interconnections are provided to connect between a portion of the driving interconnection disposed at a position distant from the voltage generating circuit on the substrate and the internal voltage comparison circuit. The internal voltage comparison circuit compares potential inputted through the voltage monitoring interconnection with the driving potential.

REFERENCES:
patent: 6707736 (2004-03-01), Miyakawa et al.
patent: 7375998 (2008-05-01), Yang
patent: 2005-242570 (2005-09-01), None

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