Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

Reexamination Certificate

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C365S185210, C365S185180

Reexamination Certificate

active

07920435

ABSTRACT:
A semiconductor memory device comprises a plurality of memory cells connected to a bit line, and a sense amplifier of the current sense type. The sense amplifier includes an initial charging circuit capable of initially charging the bit line with a suppressed value of current only for a certain starting period during an initial charging period. The sense amplifier detects a value of current flowing in the bit line to decide data read out of each of the memory cells.

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patent: 6504761 (2003-01-01), Kai et al.
patent: 2003/0026145 (2003-02-01), Lee
patent: 2006/0034140 (2006-02-01), Ogawa et al.
patent: 2007/0133297 (2007-06-01), Cernea
patent: 2007/0280031 (2007-12-01), Maejima et al.
patent: 2008/0158957 (2008-07-01), Ogawa et al.

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