Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2011-04-05
2011-04-05
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S185210, C365S185180
Reexamination Certificate
active
07920435
ABSTRACT:
A semiconductor memory device comprises a plurality of memory cells connected to a bit line, and a sense amplifier of the current sense type. The sense amplifier includes an initial charging circuit capable of initially charging the bit line with a suppressed value of current only for a certain starting period during an initial charging period. The sense amplifier detects a value of current flowing in the bit line to decide data read out of each of the memory cells.
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Kabushiki Kaisha Toshiba
Nguyen Dang T
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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