Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1997-09-19

2001-05-22

Tran, Minh Loan (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S309000

Reexamination Certificate

active

06236078

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to a structure of a capacitor for storing data therein, which is suitable for use in a semiconductor memory device, and a method of manufacturing it.
2. Description of the Related Art
In a semiconductor memory device (e.g., a DRAM (Dynamic Random Access Memory)), a stack-type capacitor has been used heavily as a capacitor for storing a signal charge therein. This type of stack-type capacitor is a capacitor having a structure wherein a dielectric film is formed between conductive layers stacked as electrodes. Further, there is also known one in which each electrode takes the shape of a fin to enlarge the area of the capacitor.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide a structure capable of preventing resistance to a soft error incident to a decrease in the area of a stack-type capacitor having a conventional structure by miniaturization of a device from being degraded in the stack-type capacitor, and storing the amount of electric charges required to store or retain data.
It is another object of the present invention to provide a structure having a stack-type capacitor whose electrode is fin-shaped, which is capable of restricting an increase in the aspect ratio of a contact hole forming a bit line therein, which occurs as the thickness of a memory cell increases.
Typical ones of various inventions of the present application have been shown in brief. However, the various inventions of the present application and specific configurations of these inventions will be understood from the following description.


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