Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1997-02-10

1998-01-06

Clawson, Jr., Joseph E.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365177, 36518906, 36518907, 36518909, 365203, 365208, 330252, 330261, G11C 706

Patent

active

057062366

ABSTRACT:
A sense amplifier including a presense amplifier and a main sense amplifier. The presense amplifier detects a potential difference between a pair of bit lines based on information read from memory cells and outputs a pair of current signals in accordance with the detected potential difference. The main sense amplifier amplifies the pair of current signals from the presense amplifier to output a first pair of voltage signals. The main sense amplifier provides an output current which allows the first pair of current signals to flow through the presense amplifier. The main sense amplifier includes a current supply circuit for outputting a second pair of current signals based on the amount of the first pair of current signals output from the presense amplifier, and a converting circuit for converting the second pair of current signals from the current supply circuit to voltage signals and outputting the voltage signals.

REFERENCES:
patent: 4820997 (1989-04-01), Sano et al.
patent: 5182477 (1993-01-01), Yamasaki et al.
patent: 5282166 (1994-01-01), Ozaki
patent: 5285416 (1994-02-01), Tokami et al.
patent: 5291453 (1994-03-01), Aota et al.
patent: 5297090 (1994-03-01), McClure

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