Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Bad bit

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Details

3652257, 36523003, G11C 700

Patent

active

060727365

ABSTRACT:
There is provided a semiconductor memory device 100 comprising memory cell blocks 20-1 to 20-n, decoder circuits 10-1 to 10-n that carry out the redundant operation provided so as to correspond to each memory cell block, a Roll Call signal transmission circuit 110 which detect if the redundant function is in operation; wherein each decoder circuit outputs a decoder signal FCi at low level to the Roll Call signal transmission circuit when the redundant function is in operation, but outputs a decoder signal at high level when the redundant function is not in operation, and wherein the Roll Call signal transmission circuit outputs a judgment signal at high level when all the decoder signals are at high level, but outputs a low level judgment signal when any of the decoder signals is at low level.

REFERENCES:
patent: 5907511 (1999-05-01), Crafts

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