Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1993-03-01

1995-01-03

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Bad bit

3652257, 36523003, G11C 700

Patent

active

053792599

ABSTRACT:
Two redundant blocks RB1 and RB2 are provided independent from the normal memory cell block BL, and selection of the redundant block when redundancy is selected is carried out by a least significant column address signal Y0 and a signal /Y0 complementary thereto in a semiconductor memory device. Therefore, a semiconductor memory device can be provided in which when defective bits exist continuously in a memory cell array, the continuous defective bit can be replaced by two redundant bit lines.

REFERENCES:
patent: 4601019 (1986-07-01), Shah et al.
patent: 4757474 (1988-07-01), Fukushi et al.
patent: 4807191 (1989-02-01), Flannagan
patent: 4817056 (1989-03-01), Furutani et al.
patent: 4837747 (1989-06-01), Dosaka et al.
patent: 5021944 (1991-06-01), Sasaki et al.
patent: 5195057 (1993-03-01), Kasa et al.

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