Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1998-04-09

1999-11-02

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365175, G11C 1300

Patent

active

059782595

ABSTRACT:
Provided is a semiconductor device, including: a semiconductor substrate; a first conductive type well which is formed on the semiconductor substrate; first and second field oxide layers which are formed on the well, defining the active region of the device; a node junction, where second conductive type impurity ions are heavily doped, making contact with the field oxide layer in the well; a gate electrode formed by interposing a gate oxide layer between the second field oxide layer and the node junction on the well; a switching device made from an interlevel insulating layer, for covering the gate electrode, and having a contact hole exposing the node junction on the semiconductor substrate; a storage electrode which makes contact with the node junction through the contact hole; a dielectric layer formed on the storage electrode; and a memory device made of a plate electrode which is formed on the dielectric layer.

REFERENCES:
patent: 4649629 (1987-03-01), Miller et al.
patent: 5081052 (1992-01-01), Kobayashi et al.

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