Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1988-03-29

1989-12-12

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365149, 365184, G11C 1124

Patent

active

048872377

ABSTRACT:
A semiconductor memory device is provided with memory cells which each comprises an insulated gate type field effect transistor and a capacitor connected in series with one another and connected to bit lines. The capacitor is composed of a pair of electrodes and a dielectric film which includes a silicon nitride film existing between the pair of electrodes. One electrode of the capacitor is provided with a terminal to which a voltage is applied. The value of the applied voltage is chosen so that the voltage applied between the pair of electrodes is smaller in an absolute value than a voltage applied to the bit line.

REFERENCES:
patent: 4638460 (1987-01-01), Matsumoto
patent: 4740920 (1988-04-01), Matsumoto

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