Semiconductor memory device

Static information storage and retrieval – Read/write circuit

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Details

365210, 36518912, 36523003, G11C 1124

Patent

active

053093933

ABSTRACT:
A semiconductor memory device of the invention realizes a reduced memory array area decreasing the number of connection holes between data-lines and memory cells. The memory cell is made up of one transistor and one capacitor. The plurality of memory cells are connected in such a way that the transisters are connected in series to one another. The individual electrodes of the capacitors are connected to the respective connection of the transistors. By applying a voltage to the word-lines in order, the information stored as charge in respective capacitors is read out to the data-line.

REFERENCES:
patent: 4648073 (1987-03-01), Kenney
patent: 4648074 (1987-03-01), Pollachek
patent: 4717261 (1988-01-01), Kita et al.
patent: 4939690 (1990-07-01), Modomi et al.
patent: 4996669 (1991-02-01), Endoh et al.

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