Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1991-02-19
1993-11-30
Mottola, Steven
Static information storage and retrieval
Read/write circuit
Differential sensing
365182, G11C 702
Patent
active
052672085
ABSTRACT:
By provided a dummy region, having a shape similar to and being formed in the same process as, the active regions having transistors that constitute memory cells formed therein, between two transistors, the spacing between the active region and the dummy region is made to be equal to the spacing between other transistors. By reducing the nonuniformity in the gate width of the transistors within the memory cell array regions with the above arrangement, it is possible to prevent the reduction of the transistor performance, and to prevent a performance reduction and the generation of malfunctions due to a delay in the data output time of the semiconductor memory device.
REFERENCES:
patent: 4799089 (1989-01-01), Fukuma et al.
patent: 5105385 (1992-04-01), Ohtsuka et al.
Mottola Steven
NEC Corporation
LandOfFree
Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2102934