Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Data refresh

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365189, G11C 700

Patent

active

045817200

ABSTRACT:
A dynamic memory having single element storage cells. A plurality of gate circuits are connected to the column lines of the storage cell array at both ends of the column line. A plurality of sense amplifiers are disposed along both ends of the column lines and connected to the gate circuits. In accordance with switching of the gate circuits, a portion of the sense amplifiers are coupled with a portion of the column lines to perform a refresh operation and read or write operations for the storage cells connected thereto. Also, the remaining sense amplifiers are coupled with the remaining column lines to perform only the refresh operation of the storage cells connected to the remaining column lines.

REFERENCES:
patent: 4203159 (1980-05-01), Wanlass
P. T. Wu, "Read/Write Dynamic Memory Using Two Devices Per Cell and Having Internal Refresh", IBM Technical Disclosure Bulletin, vol. 23, No. 10, Mar. 1981, pp. 4620-4621.

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