Semiconductor memory device

Static information storage and retrieval – Systems using particular element – Semiconductive

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Details

365184, 307238, G11C 1140

Patent

active

041516079

ABSTRACT:
A semiconductor memory device consisting of a storage capacitance and an insulated gate field-effect transistor, wherein over a first conductive substance which lies in contact with a source of drain region constituting the transistor and which becomes a gate of the transistor through a first insulating film, a second conductive substance is deposited so that at least a part thereof may be stacked over the first conductive substance, and wherein a second insulating film and a third conductive substance are successively deposited on the second conductive substance, whereby the second conductive substance, the second insulating film and the third conductive substance constitute the storge capacitance.

REFERENCES:
patent: 3849767 (1974-11-01), Shirato
patent: 3855610 (1974-12-01), Masuda

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