1997-03-25
1998-05-26
Canney, Vincent P.
Excavating
G06F 1100
Patent
active
057578095
ABSTRACT:
A semiconductor memory device includes: a plurality of sectioned memory arrays; a comparing circuit; and a predetermined terminal, and configured so that the test mode, the same test data is written in simultaneously into a plurality of memory arrays, and when the written data is read out, the data is read out simultaneously from a plurality of memory arrays so that the comparing circuit compares the simultaneously read-out data outputs, if the result of the comparison shows agreement, the data itself is outputted through the predetermined terminal, while if the result of the comparison shows disagreement, the predetermined terminal is set into a high-impedance state, or the predetermined terminal is made to output a particular voltage other than the voltages representing the `1` level and the `0` level.
REFERENCES:
patent: 5617369 (1997-04-01), Tomishima et al.
patent: 5652723 (1997-07-01), Dosaka et al.
Kiso Hiroshi
Takata Hidekazu
Canney Vincent P.
Sharp Kabushiki Kaisha
LandOfFree
Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1972254