Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Differential sensing

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Details

365190, 365208, 3652256, 365 51, 365 63, G11C 700, G11C 1140

Patent

active

053922506

ABSTRACT:
In a semiconductor memory device of the present invention, data read from a memory cell to a pair of complementary data lines or a pair of common data lines are fed directly to an output circuit not through any sense amplifier. As a result, the delay time of the sense amplifier itself is omitted from the address access time of the conventional semiconductor memory device using the sense amplifier, so that the semi-conductor memory device of the present invention can have its address access time made shorter than that of the conventional semiconductor memory device.

REFERENCES:
patent: 4713796 (1987-12-01), Ogiue et al.
patent: 4815038 (1989-03-01), Scharrer et al.
patent: 5068828 (1991-11-01), Miyaoka et al.
patent: 5111432 (1992-05-01), Miyaoka

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