Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1993-12-02
1995-02-21
Fears, Terrell W.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365117, G11C 1300
Patent
active
053922344
ABSTRACT:
Bit lines BL0 and /BL0 are connected to a sense amplifier SA0, the gate of a first MOS transistor to a first word line WL0, a first electrode of a first Ferroelectric capacitor Cs1 to the source of the first Qn, the drain of the first Qn to BL0, a second electrode of Cs1 to a first plate electrode CP0, the gate of a second MOS transistor Qn to a second word line DWL0, a first electrode of a second Ferroelectric capacitor Cd2 to the source of the second Qn, the drain of the second Qn to /BL0, and a second electrode of Cd1 to a second plate electrode DCP0, and after turning off the second Qn, the logic voltage of DCP0 is inverted. Hence, in a semiconductor memory device employing the Ferroelectric element, the dummy memory capacitor is initialized securely, and high speed reading is enabled without concentration of power consumption.
Hirano Hiroshige
Moriwaki Nobuyuki
Nakane George
Sumi Tatsumi
Fears Terrell W.
Matsushita Electric - Industrial Co., Ltd.
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