Static information storage and retrieval – Format or disposition of elements
Patent
1993-08-09
1995-02-21
Fears, Terrell W.
Static information storage and retrieval
Format or disposition of elements
365149, G11C 1124
Patent
active
053922328
ABSTRACT:
A semiconductor memory device including a memory cell array which is formed of each of memory cells connected to intersection of a plurality of bit lines and word lines is provided such that, during designing the layout, a length of a storage electrode of the outermost memory cell in the memory cell array is longer than that of a storage electrode of an inner memory cell, or a spacing between two bit lines in the periphery of the memory cell array is longer than that between bit lines in the inner portion of the memory cell array, or a width of an active region of the outermost memory cell is wider than that of an active region of the inner memory cell, thereby forming a metal layer having an excellent step coverage by means of only the layout arrangement without additional processes while being not concerned about the structure of a storage electrode.
REFERENCES:
patent: 5136533 (1992-08-01), Harari
Ahn Ji H.
Kim Kyeong T.
Donohoe Charles R.
Fears Terrell W.
Samsung Electronics Co,. Ltd.
Westerlund Robert A.
Whitt Stephen R.
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