Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1997-06-30

2000-02-15

Nguyen, Tan T.

Static information storage and retrieval

Floating gate

Particular biasing

36518509, G11C 1600

Patent

active

060260246

ABSTRACT:
In nonvolatile semiconductor memory devices, during program write operations for example, writing is accomplished by changing the threshold condition until the output from a memory cell exceeds the read verify level. During read operations, it is determined whether a target memory cell has been programmed or not by sensing whether the output from the memory cell exceeds a prescribed read level. When the data retention capability of a memory cell declines, the threshold condition of the memory cell changes. If the output of the memory cell changes to a level at which the output does not exceed the read level, the wrong data is read out. In the present invention, a monitor level which differs from the read level is established, and in the event that the output from a memory cell changes such as to approach this monitor level, this fact is sensed in advance, thereby preventing readout of wrong data. In the event that it is sensed that memory cell output has changed such as to reach the monitor level, write operation is performed on the memory cell again.

REFERENCES:
patent: 5428569 (1995-06-01), Kato et al.
patent: 5586074 (1996-12-01), Higuchi
patent: 5652720 (1997-07-01), Aulas et al.
patent: 5708602 (1998-01-01), Yamada

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