Semiconductor memory device

Static information storage and retrieval – Systems using particular element – Capacitors

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G11C 1124

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active

060814438

ABSTRACT:
In a dynamic random access memory, at a time of body-refresh operation, a bit-line potential VBL is set to a body-refresh-potential VBR, and the body-refresh-potential VBR is supplied to bit-line pairs via a bit-line precharging/equalizing circuit 111c, thereby the charge accumulated in the body of the n channel MOS transistor 72cb in a memory cell is drained to the bit-line pairs.

REFERENCES:
patent: 4807194 (1989-02-01), Yamada et al.
patent: 5471421 (1995-11-01), Rose et al.
patent: 5578865 (1996-11-01), Vu
patent: 5770881 (1998-06-01), Pelella
patent: 5821575 (1998-10-01), Mistry
patent: 5877978 (1999-03-01), Morishita
Konishi et al. "A 38-ns 4-Mb DRAM with a Battery-Backup (BBU) Mode", IEEE Journal of Solid-State Circuits, vol. 25. No. 5, Oct. 1990, pp. 1112-1117.
Asakura et al., "An Experimental 256-Mb DRAM with Boosted Sense-Ground Scheme", IEEE Journal of Solid-State Circuits, vol. 29l No. 11, Nov. 1994, pp. 1303-1308.
Morishita et al., "Leakage Mechanism due to Floating Body and Countermeasure on Dynamic Retention mode of SOI-DRAM", 1995 Symposium on VLSI Technology Digest of Technical Papers, April 1995, pp. 141-142.
Maeda et al., "A Vertical.phi.-Shaped Transistor 9 V.phi.T) Cell of aGbit DRAM and Beyond", 1994 Symposium on VLSI Technology Digest of Technical Papers, April 1994, pp. 133-134.
Yamagata et al., "Circuit Design Techniques for Low-Voltage Operating and/or Giga-Scale DRAMs", 1995 IEEE International Solid-State Circuits Conference Digest of Technical Papers, January 1995, pp. 248-249.

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