Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1977-01-11

1977-11-29

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

307238, 357 23, G11C 1140

Patent

active

040607968

ABSTRACT:
A semiconductor memory device provided with one transferring electrode, one gate electrode and one diode of a charge coupled device is produced by a process with a reduced number of steps of diffusion and patterning. Both electrodes consists of doped polycrystalline silicon and both are electrically connected to a resistive layer which consists of non-doped polycrystalline silicon. A potential barrier between the region of both electrodes is removed due to the resistive layer. Resistive layer is formed by utilization of a two-stage deposition of the polycrystalline silicon layer with appropriate mashing steps.

REFERENCES:
patent: 3500142 (1970-03-01), Kahng
patent: 3649884 (1972-03-01), Haneta

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1635429