Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1996-09-26

1998-10-27

Yoo, Do Hyun

Static information storage and retrieval

Systems using particular element

Ferroelectric

36518905, 365226, G11C 1122

Patent

active

058285962

ABSTRACT:
A semiconductor memory device includes a ferroelectric memory having a non-volatile operation mode and a volatile operation mode; an input terminal to which an input signal indicating a voltage level of a power source voltage is input; a first signal generating circuit outputting a first control signal for regulating activation and inactivation of the non-volatile operation mode to the ferroelectric memory; and a second signal generating circuit outputting a second control signal for regulating the activation and inactivation of the non-volatile operation mode to the first signal generating circuit, based on the input signal. The non-volatile operation mode and the volatile operation mode are automatically switched with each other in accordance with changes in the voltage level of the power source voltage under a first operation condition, and only the volatile operation mode is activated under a second operation condition.

REFERENCES:
patent: 5455786 (1995-10-01), Takeuchi et al.
patent: 5539279 (1996-07-01), Takeuchi et al.

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