Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1982-12-27

1984-10-23

Moffitt, James W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365179, 365189, G11C 700

Patent

active

044792000

ABSTRACT:
A semiconductor memory device includes at least, a memory cell including a first Schottky diode therein, a word line, a bit line, a first constant-current circuit for the word line, a second constant-current circuit for the bit line, and a bias circuit for biasing the first and second constant-current circuits. The bias circuit contains therein a second Schottky barrier diode. A forward voltage V.sub.F of the second Schottky barrier diode is substantially the same as that of the first Schottky barrier diode.

REFERENCES:
patent: 4057789 (1977-11-01), Spadavecchia et al.
IBM Technical Disclosure Bulletin--vol. 21 No. 4, Sep. 1978; pp. 1476-1478.
IEEE Journal of Solid-State Circuits, "A 25-ns Read Access Bipolar 1 Kbit TTL RAM", by Mayumi et al., vol. SC-9, No. 5, Oct. 1974, pp. 283-284.

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